2N222 Transistor (Buy 20 & Get 5 Free)

Specification

• Maximum Collector-Emitter Voltage (Vce): 30V
• Maximum Collector-Base Voltage (Vcb): 60V
• Maximum Emitter-Base Voltage (Veb): 5V
• Maximum Collector Current (Ic): 600mA
• Power Dissipation (Pd): 625mW
• DC Current Gain (hfe): 100-300
• Transition Frequency (ft): 300MHz
• Input Capacitance (Cib): 6pF
• Output Capacitance (Cob): 2.5pF
• Reverse Transfer Capacitance (Crb): 1.3pF

Description

The 2N222 transistor is a small signal NPN bipolar junction transistor that is commonly used in electronic circuits due to its low cost, availability, and ease of use. Here are some of its technical specifications:

1. Maximum Collector-Emitter Voltage (Vce): 30V
2. Maximum Collector-Base Voltage (Vcb): 60V
3. Maximum Emitter-Base Voltage (Veb): 5V
4. Maximum Collector Current (Ic): 600mA
5. Power Dissipation (Pd): 625mW
6. DC Current Gain (hfe): 100-300
7. Transition Frequency (ft): 300MHz
8. Input Capacitance (Cib): 6pF
9. Output Capacitance (Cob): 2.5pF
10. Reverse Transfer Capacitance (Crb): 1.3pF

Note that these values may vary depending on the specific manufacturer and batch of the transistor. It is always recommended to refer to the datasheet for the specific transistor you are using for accurate technical specifications.